This article is cited by 676 publications. The resistor-loaded inverter based on a WSe 2 film, with a gain of ∼13, further demonstrates its applicability for logic-circuit integrations. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The top-gated field-effect transistors based on WSe 2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm 2/Vs, respectively.
Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO 3, where large-size WSe 2 monolayer flakes or thin films can be successfully grown. However, the growth of a transition metal selenide monolayer has still been a challenge.
Recent reports have demonstrated the growth of large-size two-dimensional MoS 2 layers by the sulfurization of molybdenum oxides.
The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices.
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